FinFET Modeling for IC Simulation and Design
This book is the first to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an expertsa insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMGdevicesa#39; physics effects and behaviors of aggressively scaled MOSFETs gradually built a collection of models for Vt ... become the dominant, not the secondary, effects, and the real-device models determine the accuracy of circuit simulation. ... BSIM3 [10] introduced three separate physical mechanismsa channel length modulation, draininduced barrier lowering, and hot-carrier- induced body bias effect.
| Title | : | FinFET Modeling for IC Simulation and Design |
| Author | : | Yogesh Singh Chauhan, Darsen Duane Lu, Vanugopalan Sriramkumar, Sourabh Khandelwal, Juan Pablo Duarte, Navid Payvadosi, Ai Niknejad, Chenming Hu |
| Publisher | : | Academic Press - 2015-03-17 |
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